Datasheet > BSS84

BSS84

更新时间： 2024-10-03 14:54:39

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	977K
描述
场效应晶体管

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中文翻译

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技术参数
数据手册

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BSS84 技术参数

极性：	P channel	Pd(W)：	0.36
V(BR)DS_min(V)：	-50	ID_max(A)：	-0.13
Rds_max(Ω）：	10	@VGS(V)：	-5
VTH(GS)：	-0.8~-2	PACKAGE：	SOT-23
class：	Transistors

BSS84 数据手册

BSS84

P-CHANNEL MOSFET

SOT-23

FEATURE

Energy Efficient

Low Threshold Voltage

High-speed Switching

Miniature Surface Mount Package Saves Board Space

APPLICATION

DC−DC converters,load switching, power

management in portable and battery−powered products such

as computers, printers, cellular and cordless telephones.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

-50

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_DS

V_GS

I_D

±20

-0.13

-0.52

225

Pulsed Drain Current (note 1) @tp <10 μs

Power Dissipation

I_DM

P_D

℃/W

℃

Thermal Resistance from Junction to Ambient (note 2)

Junction Temperature

R_θJA

T_J

556

150

Storage Temperature

T_STG

-55~+150

℃

Maximum Lead Temperature for Soldering Purposes , Duration

for 5 Seconds

T_L

260

℃

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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