生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.56 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 0.13 A | 最大漏源导通电阻: | 10 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 12 pF |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS84_1 | PANJIT |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS84_10 | DIODES |
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P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS84_14 | PANJIT |
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P-CHANNEL ENHANCEMENT MODE MOSFET | |
BSS84_15 | DIODES |
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P-CHANNEL ENHANCEMENT MODE MOSFET | |
BSS84_17 | DIODES |
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P-CHANNEL ENHANCEMENT MODE MOSFET | |
BSS8402DW | PANJIT |
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COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS | |
BSS8402DW | DIODES |
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COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS8402DW | LGE |
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场效应晶体管 | |
BSS8402DW | MCC |
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Tape: 3K/Reel, 120K/Ctn.; | |
BSS8402DW | BL Galaxy Electrical |
获取价格 |
N:0.115A, 60V, 0.2W, Dual MOSFETs P:-0.13A, -50V, 0.2W, Dual MOSFETs |