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BSS8402DW_08

更新时间： 2024-11-19 09:00:35
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
5页 174K
描述
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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BSS8402DW_08 数据手册

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BSS8402DW  
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
•
•
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
•
•
Case: SOT-363  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Terminal Connections: See Diagram  
Marking Information: See Page 5  
Ordering Information: See Page 5  
Weight: 0.008 grams (approximate)  
•
•
•
Complementary Pair  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 3 and 4)  
Qualified to AEC-Q101 Standards for High Reliability  
•
•
•
•
SOT-363  
D1  
G2  
S2  
Q1  
Q2  
S1  
G1  
D2  
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings – Total Device @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
Value  
200  
Units  
mW  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Maximum Ratings N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VDSS  
Value  
60  
Units  
Drain-Source Voltage  
V
V
60  
Drain-Gate Voltage RGS ≤ 1.0MΩ  
VDGR  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
VGSS  
Drain Current (Note 1)  
Continuous  
Continuous @ 100°C  
Pulsed  
115  
73  
800  
mA  
ID  
Maximum Ratings P-CHANNEL – Q2, BSS84 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
-50  
Units  
V
Drain-Source Voltage  
-50  
V
Drain-Gate Voltage RGS ≤ 20KΩ  
Gate-Source Voltage  
Continuous  
Continuous  
V
±20  
-130  
Drain Current (Note 1)  
mA  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 5  
www.diodes.com  
June 2008  
© Diodes Incorporated  
BSS8402DW  
Document number: DS30380 Rev. 12 - 2  
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