是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.06 | 其他特性: | HIGH RELIABILITY |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.115 A | 最大漏源导通电阻: | 7.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS8402DWQ-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel | |
BSS8402DWT/R13 | PANJIT |
获取价格 |
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS | |
BSS8402DWT/R13-R | PANJIT |
获取价格 |
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS | |
BSS8402DWT/R7 | PANJIT |
获取价格 |
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS | |
BSS8402DWT/R7-R | PANJIT |
获取价格 |
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS | |
BSS84-13-F | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE MOSFET | |
BSS84-3L | BL Galaxy Electrical |
获取价格 |
-50V, P Channel, Small Signal MOSFETs | |
BSS84-7 | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS84-7-F | PANJIT |
获取价格 |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS84-7-F | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE MOSFET |