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BSS8402DW PDF预览

BSS8402DW

更新时间: 2024-11-20 17:01:35
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 504K
描述
N:0.115A, 60V, 0.2W, Dual MOSFETs P:-0.13A, -50V, 0.2W, Dual MOSFETs

BSS8402DW 数据手册

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Product Specification  
Complementary Pair Enhancement Mode Field Effect Transistor  
BSS8402DW  
FEATURES  
Low On-Resistance.  
Low Gate Threshold Voltage.  
Low Input Capacitance.  
Fast Switching Speed.  
Low Input/Output Leakage.  
Complementary Pair.  
SOT-363  
ORDERING INFORMATION  
Type No.  
Marking  
KNP  
Package Code  
SOT-363  
BSS8402DW  
MAXIMUM RATING Total Device @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
mW  
/W  
PD  
Power Dissipation  
200  
RθJA  
Thermal resistance,Junction-to-Ambient  
Junction and Storage Temperature  
625  
TJ, TSTG  
-55 to +150  
Maximum Ratings N-CHANNEL Q1, 2N7002 Section  
@ Ta=25unless otherwise specified  
Symbol  
VDSS  
Parameter  
Value  
60  
Units  
Drain-Source voltage  
Drain-Gate voltage(RGS≤1.0MΩ)  
V
V
VDGR  
60  
±20  
±40  
Gate -Source voltage  
continuous  
VGSS  
V
Pulsed  
Drain current  
continuous  
115  
73  
ID  
continuous@100℃  
mA  
Pulsed  
800  
MTM0255A: November 2021  
www.gmesemi.com  
1

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