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BSS8402DW-13 PDF预览

BSS8402DW-13

更新时间: 2024-11-19 19:45:03
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 132K
描述
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTC PACKAGE-6

BSS8402DW-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.06
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.115 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
极性/信道类型:N-CHANNEL AND P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSS8402DW-13 数据手册

 浏览型号BSS8402DW-13的Datasheet PDF文件第2页浏览型号BSS8402DW-13的Datasheet PDF文件第3页浏览型号BSS8402DW-13的Datasheet PDF文件第4页浏览型号BSS8402DW-13的Datasheet PDF文件第5页 
SPICE MODEL: BSS8402DW  
BSS8402DW  
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD  
EFFECT TRANSISTOR  
Features  
·
·
·
·
·
·
·
Low On-Resistance: RDS(ON)  
Low Gate Threshold Voltage  
Low Input Capacitance  
SOT-363  
A
G2  
S2  
D1  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
Fast Switching Speed  
Low Input/Output Leakage  
C
B
B
Complementary Pair  
S1  
G1  
D2  
C
Available in Lead Free/RoHS Compliant Version (Note 2)  
G
H
D
0.65 Nominal  
Mechanical Data  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
H
·
·
Case: SOT-363  
M
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
K
L
0.90  
0.25  
0.10  
0°  
D
F
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
L
Terminals: Solderable per MIL-STD-202, Method 208  
TOP VIEW  
M
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 5, on Page 5  
D1  
G2  
S2  
a
All Dimensions in mm  
Q1  
Q2  
·
·
·
Terminal Connections: See Diagram  
Marking: KNP (See Page 5)  
S1  
G1  
D2  
Weight: 0.008 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings - Total Device  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
Pd  
Value  
Units  
mW  
°C/W  
°C  
200  
625  
RqJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Maximum Ratings N-CHANNEL - Q1, 2N7002 Section  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
VDGR  
60  
Drain-Gate Voltage RGS £ 1.0MW  
Gate-Source Voltage  
Continuous  
Pulsed  
20  
40  
VGSS  
V
115  
73  
800  
Drain Current (Note 1)  
Continuous  
Continuous @ 100°C  
Pulsed  
ID  
mA  
@ TA = 25°C unless otherwise specified  
Maximum Ratings P-CHANNEL - Q2, BSS84 Section  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
-50  
Units  
V
-50  
V
Drain-Gate Voltage RGS £ 20KW  
Gate-Source Voltage  
Continuous  
Continuous  
±20  
V
mA  
Drain Current (Note 1)  
-130  
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30380 Rev. 7 - 2  
1 of 5  
BSS8402DW  
www.diodes.com  
ã Diodes Incorporated  

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