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BSS8402DW PDF预览

BSS8402DW

更新时间: 2024-11-20 14:53:31
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
6页 970K
描述
Tape: 3K/Reel, 120K/Ctn.;

BSS8402DW 数据手册

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BSS8402DW  
Features  
High Density Cell Design for Ultra Low RDS(on)  
Rugged and Reliable  
Epoxy Meets UL 94 V-0 Flammability Rating  
Dual  
N&P-Channel  
MOSFET  
Moisture Sensitivity Level 1  
Halogen Free. “Green” Device (Note 1)  
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
Operating Junction Temperature Range : -55°C to +150°C  
Storage Temperature Range: -55°C to +150°C  
SOT-363  
Thermal Resistance: 625°C/W Junction to Ambient  
Parameter  
Rating  
Symbol  
Unit  
G
PD  
200  
6
1
5
4
3
Total Power Dissipation  
N-Channel MOSFET  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
P-Channel MOSFET  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
mW  
C
B
2
VDS  
VGS  
ID  
60  
V
V
A
A
±20  
M
H
0.115  
K
L
J
D
VDS  
VGS  
ID  
-50  
±20  
V
V
A
A
DIMENSIONS  
MM  
INCHES  
DIM  
NOTE  
-0.13  
-0.52  
MIN MAX MIN MAX  
0.006 0.014 0.15 0.35  
0.045 0.053 1.15 1.35  
0.079 0.096 2.00 2.45  
Pulsed Drain Current(Note 3)  
A
B
C
D
G
H
J
K
L
M
IDM  
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,  
0.026  
0.65  
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.  
TYP.  
0.047 0.055 1.20 1.40  
0.071 0.087 1.80 2.20  
----- 0.004 ----- 0.10  
0.031 0.043 0.80 1.10  
0.010 0.018 0.26 0.46  
0.003 0.006 0.08 0.15  
Internal Structure and Marking Code  
D1  
G2  
S2  
Suggested Solder Pad Layout  
6
5
4
6
1
5
4
3
842  
2
1
2
3
S1  
G1  
D2  
Rev.3-5-07202022  
1/6  
MCCSEMI.COM  

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