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BSS84

更新时间: 2024-11-18 22:39:39
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捷特科 - ZETEX /
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描述
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BSS84 数据手册

  
SOT23 P-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
BSS84  
ISSUE 2 – SEPTEMBER 1995  
PARTMARKING DETAIL —  
SP  
S
D
G
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
-50  
UNIT  
V
Drain-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
ID  
-130  
mA  
mA  
V
IDM  
-520  
Gate-Source Voltage Peak  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
VGS  
±20  
PTOT  
tj:tstg  
360  
mW  
°C  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Drain-Source  
Breakdown Voltage  
BVDSS  
VGS(th)  
IDSS  
-50  
V
VGS=0V, ID=0.25mA  
Gate-Source  
Threashold Voltage  
-0.8  
-1.5  
-2.0  
V
VDS=VGS , ID=-1mA  
Zero gate Voltage  
Drain Current  
-1  
-2  
-15  
-60  
T =25 °C  
T =125 °C  
µA  
µA  
V
=-50V, V =0V(2)  
°
Tj=25 C  
V
-100  
-10  
=-25V, V =0V  
Gate-Source Leakage  
Current  
IGSS  
-1  
nA  
VGS = ±20V  
VDS=0V  
Drain Source On-State RDS(on)  
Resistance (1)  
6
10  
VGS=-5V  
ID=-100mA  
Forward  
Transconductance (1)  
(2)  
gfs  
0.05  
0.07  
S
VDS=-25V  
ID=-100mA  
Input Capacitance (2)  
Output Capacitance  
Ciss  
Coss  
Crss  
40  
15  
6
VGS=0V  
VDS=-25V  
f=1MHz  
pF  
ns  
Reverse Transfer  
Capacitance (2)  
Turn-On Time ton  
td(on)  
tr  
10  
10  
18  
25  
VDD=-30V  
ID=-0.27A  
VGS=-10V  
RGS=50Ω  
Turn-Off Time toff  
td(off)  
tf  
* (1) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%  
(2) Sample test.  
3 - 69  

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