Datasheet > BSS84

BSS84

更新时间： 2024-11-24 17:15:11

品牌	Logo	应用领域
友台半导体 - UMW		栅栅极
页数	文件大小	规格书
2页	260K
描述
漏源电压（Vdss）:-50V;持续漏极电流（Id）（在25°C时）:-0.13A;栅极-源极阈值电压:2V @ 1mA;漏源导通电阻:10Ω @ 100mA,5V;最大功耗（Ta = 25°C）:300mW;种类:P-Channel;Vgs(th)(V):±20

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数据手册

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BSS84 数据手册

UMW

UMW BSS84

P-Channel Enhancement Mode MOSFET

SOT–23

■ Features

● VDS (V) = -60V

● ID = -0.13 A

● RDS(ON) ≤ 10Ω (VGS = -5V)

1. GATE

2. SOURCE

3. DRAIN

MARKING

P. D Y

■ Absolute Maximum Ratings Ta = 25℃ unless otherwise specified

Parameter

Symbol

VDSS

Rating

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current *

VGSS

±20

– Continuous

– Pulsed

-130

-520

Total Power Dissipation *

300

℃/W

℃

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

RθJA

417

Tj, TSTG

-55 to +150

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;

■ Electrical Characteristics Ta = 25℃ unless otherwise specified

Parameter

Symbol

Test conditons

Min

-60

Typ Max

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -250μA

-15

-60

μA

VDS = -50V, VGS = 0V, TJ = 25℃

VDS = -50V, VGS = 0V, TJ = 125℃

VGS = ±20V, VDS = 0V

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

VGS(th)

RDS (ON)

gFS

±10

-2.0

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Input Capacitance

VDS = VGS, ID = -1mA

-0.8

VGS = -5V, ID = -100mA

VDS = -25V, ID = -0.1A

0.05

Ciss

VDS = -25V, VGS = 0V,f = 1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Turn-On Delay Time

Crss

tD(ON)

tD(OFF)

VDD = -30V, ID = -0.27A,

Turn-Off Delay Time

RGEN = 50Ω, VGS = -10V

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