5秒后页面跳转
BSS84 PDF预览

BSS84

更新时间: 2024-06-27 12:12:32
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 1078K
描述
SOT-23

BSS84 数据手册

 浏览型号BSS84的Datasheet PDF文件第2页浏览型号BSS84的Datasheet PDF文件第3页浏览型号BSS84的Datasheet PDF文件第4页浏览型号BSS84的Datasheet PDF文件第5页 
BSS84  
P-CHANNEL MOSFET  
FEATURES  
Energy efficient  
Low threshold voltage  
High-speed switching  
MECHANICAL DATA  
Case: SOT-23  
Case material: Molded plastic. UL flammability  
Classification rating: 94V-0  
SOT-23  
Equivalent circuit  
Weight: 0.008 grams (approximate)  
Marking: PD  
MAXIMUM RATINGS (TA= 25°C unless otherwise specified)  
Parameter  
Drain-source voltage  
Symbol  
VDS  
VGS  
ID  
Value  
-50  
Unit  
V
Gate-source voltage  
±20  
V
Continuous drain current  
Pulsed drain current @tp <10 μs (note 1)  
-0.13  
-0.52  
225  
A
A
IDM  
Power dissipation  
PD  
mW  
°C/W  
°C  
Thermal resistance from junction to ambient (note 2)  
Junction temperature  
RθJA  
TJ  
556  
+150  
-55~+150  
Storage temperature  
TSTG  
°C  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Drain-source breakdown voltage  
Symbol Min Typ. Max Unit  
Conditions  
VGS = 0V, ID =-250μA  
V(BR)DSS  
-50  
V
-15  
-0.1  
±5  
-2  
µA VDS =-50V,VGS = 0V  
µA VDS =-25V,VGS = 0V  
µA VGS =±20V, VDS = 0V  
Zero gate voltage drain current  
IDSS  
Gate-body leakage current  
IGSS  
Gate threshold voltage (note 3)  
VGS(th)  
-0.9  
50  
V
VDS =VGS, ID =-250μA  
VGS =-5V, ID =-0.1A  
VGS =-10V, ID =-0.1A  
10  
8
Drain-source on-resistance  
(note 3)  
RDS(on)  
gFS  
Forward transconductance  
(note 1)  
mS VDS=-25V; ID=-100mA  
Input capacitance  
Ciss  
Coss  
Crss  
td(on)  
tr  
30  
10  
5
pF  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Turn-on rise time  
pF VDS=5V,VGS =0V,f =1MHz  
pF  
ns  
2.5  
1
ns  
ns  
ns  
A
VDD=-15V,RL=50Ω,  
ID=-2.5A  
Turn-off delay time  
Turn-off fall time  
td(off)  
tf  
16  
8
Continuous current  
Pulsed current  
IS  
-0.13  
-0.52  
-2.2  
ISM  
A
Diode forward voltage (note 3)  
VSD  
V
IS=-0.13A, VGS = 0V  
Notes : 1. Repetitive rating : Pulse width limited by junction temperature.  
2. Surface mounted on FR4 board , t≤10s.  
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%.  
1
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与BSS84相关器件

型号 品牌 获取价格 描述 数据表
BSS84,215 NXP

获取价格

BSS84 - P-channel vertical D-MOS logic level FET TO-236 3-Pin
BSS84.215 NXP

获取价格

P-channel enhancement mode vertical DMOS transistor
BSS84/D87Z TI

获取价格

130mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS84/DG NXP

获取价格

P-channel enhancement mode vertical DMOS transistor
BSS84/S62Z TI

获取价格

130mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS84_1 PANJIT

获取价格

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84_10 DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84_14 PANJIT

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET
BSS84_15 DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET
BSS84_17 DIODES

获取价格

P-CHANNEL ENHANCEMENT MODE MOSFET