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BSS83PH6327XTSA1 PDF预览

BSS83PH6327XTSA1

更新时间: 2024-11-19 12:53:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管光电二极管PC局域网
页数 文件大小 规格书
9页 351K
描述
SIPMOS Small-Signal-Transistor

BSS83PH6327XTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:1.59Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:272160
Samacsys Pin Count:3Samacsys Part Category:MOSFET (P-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:BSS83PH6327XTSA1-1
Samacsys Released Date:2018-01-31 13:33:30Is Samacsys:N
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.33 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):9 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

BSS83PH6327XTSA1 数据手册

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BSS 83 P  
SIPMOS Small-Signal-Transistor  
Features  
Product Summary  
P-Channel  
Drain source voltage  
V
-60  
2
V
A
DS  
Enhancement mode  
Drain-source on-state resistance R  
DS(on)  
Avalanche rated  
Logic Level  
Continuous drain current  
I
-0.33  
D
3
dv/dt rated  
2
Qualified according to AEC Q101  
1
VPS05161  
Halogen-free according to IEC61249-2-21  
Type  
Package  
Tape and Reel  
H
6327: 3000pcs/r.  
Marking Pin 1  
PIN 2  
PIN 3  
BSS 83 P  
PG-SOT-23  
G
S
D
YAs  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
-0.33  
-0.27  
A
T = 70 °C  
A
Pulsed drain current  
I
-1.32  
D puls  
T = 25 °C  
A
Avalanche energy, single pulse  
E
E
9.5  
mJ  
AS  
I = -0.33 A , V = -25 V, R = 25  
D
DD  
GS  
Avalanche energy, periodic limited by T  
0.036  
6
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = -0.33 A, V = -48 V, di/dt = 200 A/µs,  
S
DS  
T
= 150 °C  
jmax  
Gate source voltage  
Power dissipation  
V
V
20  
GS  
P
0.36  
W
tot  
T = 25 °C  
A
Operating and storage temperature  
IEC climc category; DIN IEC 68-1  
ESD Class; JESD22-A114-HBM  
T
,
T
-55...+150  
55/150/56  
Class 0  
°C  
j
stg  
Rev. 1.5  
Page 1  
2012-03-30  

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