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BSS83P_06 PDF预览

BSS83P_06

更新时间: 2024-11-19 09:00:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 166K
描述
SIPMOS Small-Signal-Transistor

BSS83P_06 数据手册

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BSS 83 P  
SIPMOS Small-Signal-Transistor  
Features  
Product Summary  
P-Channel  
Drain source voltage  
V
-60  
2
V
A
DS  
Enhancement mode  
Drain-source on-state resistance R  
DS(on)  
Avalanche rated  
Logic Level  
Continuous drain current  
I
-0.33  
D
3
dv/dt rated  
2
1
VPS05161  
Type  
Package  
Tape and Reel  
Marking Pin 1  
PIN 2  
PIN 3  
BSS 83 P  
PG-SOT-23 L6327: 3000pcs/r.  
G
S
D
YAs  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
-0.33  
-0.27  
A
T = 70 °C  
A
Pulsed drain current  
I
-1.32  
D puls  
T = 25 °C  
A
Avalanche energy, single pulse  
E
E
9.5  
mJ  
AS  
I = -0.33 A , V = -25 V, R = 25  
D
DD  
GS  
Avalanche energy, periodic limited by T  
0.036  
6
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = -0.33 A, V = -48 V, di/dt = 200 A/µs,  
S
DS  
T
= 150 °C  
jmax  
Gate source voltage  
Power dissipation  
V
V
20  
GS  
P
0.36  
W
tot  
T = 25 °C  
A
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55...+150  
55/150/56  
°C  
j
stg  
Rev. 1.2  
Page 1  
2006-12-05  

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