Datasheet > BSS63

BSS63

更新时间： 2024-11-23 22:39:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
4页	63K
描述
PNP General Purpose Amplifier

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BSS63 数据手册

BSS63

SOT-23

Mark: T3

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switch

applications requiring high voltages. Sourced from Process 74.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

100

110

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BSS63

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

mW/ C

Thermal Resistance, Junction to Ambient

357

R_θ

C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

12 3 4

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BSS63 替代型号

型号	品牌	替代类型	描述	数据表
BSS63	ONSEMI	功能相似	PNP 通用放大器
BSS63LT1G	ONSEMI	功能相似	High Voltage Transistor

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