BSC090N03MSG

更新时间： 2024-09-25 06:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	382K
描述
OptiMOS™3 M-Series Power-MOSFET

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中文翻译

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数据手册

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BSC090N03MSG 数据手册

BSC090N03MS G

OptiMOS™3 M-Series Power-MOSFET

Product Summary

V _DS

Features

R _DS(on),max

_GS=10 V

_GS=4.5 V

mΩ

• Optimized for 5V driver application (Notebook, VGA, POL)

• Low FOM_SWfor High Frequency SMPS

• 100% avalanche tested

11.2

I _D

PG-TDSON-8

• N-channel

• Very low on-resistance R _DS(on)@ V _GS=4.5 V

• Excellent gate charge x R _DS(on)product (FOM)

• Qualified according to JEDEC¹⁾for target applications

• Superior thermal resistance

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC090N03MS G

PG-TDSON-8

090N03MS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

_GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

_GS=4.5 V, T _C=25 °C

_GS=4.5 V,

T _C=100 °C

_GS=4.5 V, T _A=25 °C,

_thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

192

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=35 A, R _GS=25 Ω

±20

¹⁾J-STD20 and JESD22

Rev. 1.16

page 1

2009-11-03

12 3 4 5 6 7...10

中文翻译

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