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BM60013FV-C PDF预览

BM60013FV-C

更新时间: 2024-01-16 05:05:03
品牌 Logo 应用领域
罗姆 - ROHM 驱动器栅极栅极驱动
页数 文件大小 规格书
33页 1012K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

BM60013FV-C 数据手册

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BM60013FV-C  
Datasheet  
Gate Driver Providing Galvanic isolation Series  
Isolation voltage 2500Vrms  
1ch Gate Driver Providing Galvanic Isolation  
BM60013FV-C  
General Description  
Key Specifications  
The BM60013FV-C is a gate driver with isolation voltage  
2500Vrms, I/O delay time of 200ns, and minimum input  
pulse width of 100ns, and incorporates the fault signal  
output functions, undervoltage lockout (UVLO) function,  
thermal protection function, and short current protection  
(SCP, DESAT) function.  
Isolation voltage:  
Maximum gate drive voltage:  
I/O delay time:  
2500 [Vrms] (Min.)  
20 [V] (Max.)  
200 [ns] (Max.)  
100 [ns] (Max.)  
Minimum input pulse width:  
Package  
SSOP-B20W  
W(Typ.) x D(Typ.) x H(Max.)  
6.50 ㎜×8.10 ㎜×2.01 ㎜  
Features  
Providing Galvanic Isolation  
Active Miller Clamping  
Fault signal output function  
(Adjustable output holding time)  
Undervoltage lockout function  
Thermal protection function  
(Adjustable threshold voltage)  
Short current protection function  
(Adjustable threshold voltage)  
Soft turn-off function for short current protection  
Applications  
Automotive isolated IGBT/MOSFET inverter gate drive  
Automotive DC-DC converter  
Industrial inverters systems  
UPS systems  
Typical Application Circuits  
GND1  
NC  
PROOUT  
S
R
GND2  
OUT1  
PRE  
DRIVER  
LOGIC  
Q
INB  
MASK  
FLTRLS  
VCC2  
OUT2  
LOGIC  
VCC1  
FLT  
UVLO  
MASK  
TIMER  
TIMER  
FB  
UVLO  
SCPIN  
SCPTH  
VTSTH  
MASK  
MASK  
INA  
ECU  
FLT  
FLT  
ENA  
TEST  
GND1  
MASK  
GND2  
VTSIN  
MASK  
Sens or  
Figure 1. For using 4-pin IGBT (for using SCP function)  
GND1  
NC  
PROOUT  
S
GND2  
OUT1  
PRE  
DRIVER  
LOGIC  
Q
INB  
MASK  
R
FLTRLS  
VCC2  
OUT2  
LOGIC  
VCC1  
FLT  
UVLO  
MASK  
TIMER  
TIMER  
FB  
UVLO  
SCPIN  
SCPTH  
VTSTH  
MASK  
MASK  
INA  
ECU  
FLT  
FLT  
ENA  
TEST  
GND1  
MASK  
GND2  
VTSIN  
MASK  
Sens or  
Figure 2. For using 3-pin IGBT (for using DESAT function)  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
.www.rohm.com  
TSZ02201-0717ABH00020-1-2  
29.May.2012 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
1/30  
TSZ2211114001  

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