Datasheet > BM60212FV-C

BM60212FV-C

更新时间： 2024-11-19 11:13:43

品牌	Logo	应用领域
罗姆 - ROHM		驱动双极性晶体管驱动器
页数	文件大小	规格书
26页	2026K
描述
BM60212FV-C是可驱动使用阴极负载方式的Nch-MOSFET及IGBT的1200V高耐压高边/低边驱动器。内置内置镜夹功能/低电压时误动作防止功能（UVLO）。

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BM60212FV-C 数据手册

Datasheet

1200V High Voltage

High and Low Side Driver

BM60212FV-C

General Description

Key Specifications

The BM60212FV-C is high and low side drive IC which

operates up to 1200V with bootstrap operation, which

can drive N-channel power MOSFET and IGBT.

Under-voltage Lockout (UVLO) function and Miller

Clamp function are built-in.



High-Side Floating Supply Voltage:

Maximum Gate Drive Voltage:

Turn ON/OFF Time:

1200V

24V

75ns (Max)

60ns

Logic Input Minimum Pulse Width:

Features

 AEC-Q100 Qualified^{(Note 1)}

 High-Side Floating Supply Voltage 1200V

 Active Miller Clamping

Package

SSOP-B20W

W(Typ) x D(Typ) x H(Max)

6.50mm x 8.10mm x 2.01mm

 Under Voltage Lockout Function

 3.3V and 5.0V Input Logic Compatible

(Note 1) Grade 1

Applications

 MOSFET Gate Driver

 IGBT Gate Driver

Typical Application Circuit

SSOP-B20W

VCCB

Up to 1200V

GND2

GND1

UVLO

ENA

INA

INB

ENA

INA

Pulse

Generator

INB

VCCA

OUTAH

OUTAL

MCA

VREG

VCCB

OUTBH

OUTBL

MCB

Regulator

Pre-

driver

C_VREG

Pre-

driver

C_VCCA

C_VCCB

GND2

LOAD

GND1

Pin 1

Figure 1. Typical Application Circuit

〇Product structure : Semiconductor integrated circuit 〇This product has no designed protection against radioactive rays

www.rohm.com

TSZ02201-0818ABH00270-1-2

18.Jan.2018 Rev.001

1/23

TSZ22111 • 14 • 001

12 3 4 5 6 7...26

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