Datasheet > BM6101FV-E2

BM6101FV-E2

更新时间： 2024-11-18 12:31:07

品牌	Logo	应用领域
罗姆 - ROHM		驱动器栅极栅极驱动
页数	文件大小	规格书
34页	888K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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BM6101FV-E2 数据手册

Datasheet

Gate Driver Providing Galvanic isolation Series

Isolation voltage 2500Vrms

1ch Gate Driver Providing Galvanic Isolation

BM6101FV-C

●General Description

●Key Specifications

The BM6101FV-C is a gate driver with isolation voltage

2500Vrms, I/O delay time of 350ns, and minimum input

pulse width of 180ns, and incorporates the fault signal

output functions, undervoltage lockout (UVLO) function,

thermal protection function, and short current protection

(SCP, DESAT) function.

 Isolation voltage:

 Maximum gate drive voltage:

 I/O delay time:

2500Vrms(Max.)

24V(Max.)

350ns(Max.)

180ns(Max.)

 Minimum input pulse width:

●Package

SSOP-B20W

W(Typ.) x D(Typ.) x H(Max.)

6.50mm x 8.10mm x 2.01mm

●Features

 Providing Galvanic Isolation

 Active Miller Clamping

 Fault signal output function

(Adjustable output holding time)

 Undervoltage lockout function

 Thermal protection function

 Short current protection function

(Adjustable reset time)

 Soft turn-off function for short current protection

(Adjustable turn-off time)

●Applications

 Supporting Negative VEE2

■

Automotive isolated IGBT/MOSFET inverter gate drive

Automotive DC-DC converter

Industrial inverters system

UPS system

●Typical Application Circuits

GND1

PROOUT

VEE2

PRE

LOGIC

DRIVER

INB

OUT1

MASK

FLTRLS

VCC2

LOGIC

VEE2

VCC1

FLT

VREG

UVLO

MASK

TIMER

UVLO

OUT2

SCPIN

GND2

VEE2

MASK

INA

ECU

FLT

ENA

TEST

GND1

Input side

chip

Output side

chip

MASK

VTSIN

Temp Sensor

Figure 1. For using 4-pin IGBT (for using SCP function)

GND1

PROOUT

VEE2

OUT1

VCC2

VREG

OUT2

SCPIN

GND2

PRE

DRIVER

LOGIC

INB

MASK

FLTRLS

LOGIC

VEE2

VCC1

FLT

UVLO

MASK

TIMER

UVLO

MASK

INA

ECU

FLT

ENA

MASK

TEST

VEE2

Input side

chip

Output side

chip

MASK

GND1

VTSIN

Temp Sensor

Figure 2. For using 3-pin IGBT (for using DESAT function)

○Product structure：Silicon integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0717ABH00090-1-2

24.Jun.2013 Rev.001

1/31

TSZ22111・14・001

12 3 4 5 6 7...34

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与BM6101FV-E2相关器件

型号	品牌	获取价格	描述	数据表
BM6102FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6102FV-C_15	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6102FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6103FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6103FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-C_15	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6108FV-LB	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6108FV-LBE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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