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BM61S40RFV-C PDF预览

BM61S40RFV-C

更新时间: 2024-10-02 11:12:43
品牌 Logo 应用领域
罗姆 - ROHM 栅极驱动脉冲驱动器
页数 文件大小 规格书
28页 1232K
描述
BM61S40RFV-C是绝缘耐压3750Vrms、输入输出延迟时间65n、最小输入脉冲宽度60ns的栅极驱动器。搭载了UVLO功能、米勒钳位功能、过电压保护功能。

BM61S40RFV-C 数据手册

 浏览型号BM61S40RFV-C的Datasheet PDF文件第2页浏览型号BM61S40RFV-C的Datasheet PDF文件第3页浏览型号BM61S40RFV-C的Datasheet PDF文件第4页浏览型号BM61S40RFV-C的Datasheet PDF文件第5页浏览型号BM61S40RFV-C的Datasheet PDF文件第6页浏览型号BM61S40RFV-C的Datasheet PDF文件第7页 
Datasheet  
Gate Driver Providing Galvanic Isolation Series  
Isolation voltage 3750Vrms  
1ch Gate Driver Providing Galvanic Isolation  
BM61S40RFV-C  
General Description  
Key Specifications  
The BM61S40RFV-C is a gate driver with an isolation  
voltage of 3750 Vrms, I/O delay time of 65ns, and  
minimum input pulse width of 60ns. It incorporates the  
Under-Voltage Lockout (UVLO) function, Miller clamp  
function and Over-Voltage Protect (OVP) function.  
Isolation Voltage:  
Maximum Gate Drive Voltage:  
I/O Delay Time:  
Minimum Input Pulse Width:  
Output Current  
3750 Vrms  
20 V  
65 ns(Max)  
60 ns  
4 A  
Features  
AEC-Q100 Qualified(Note 1 )  
Providing Galvanic Isolation  
Active Miller Clamping  
Under-Voltage Lockout Function  
Over-Voltage Protect Function  
Package  
W(Typ) x D(Typ) x H(Max)  
3.5 mm x10.2 mm x 1.9 mm  
SSOP-B10W  
UL1577 Recognized: File E356010  
(Note 1) Grade1  
Applications  
SiC MOSFET Gate Drive  
SSOP-B10W  
Typical Application Circuits  
Isolation  
GND2  
VCC2  
OUT  
MC  
GND1  
UVLO2  
Logic  
UVLO1  
VCC1  
OVP  
INA  
INB  
Pulse  
Generator  
CVCC2  
CVCC1  
-
+
GND1  
GND2  
Pin 1  
2V  
Figure 1. For Driving SiC MOSFET without Negative Power Supply  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0818ACH00400-1-2  
30.Mar.2020 Rev.002  
© 2018 ROHM Co., Ltd. All rights reserved.  
1/25  
TSZ22111 14 001  
 
 
 
 
 
 

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