Datasheet > BM6104FV-C

BM6104FV-C

更新时间： 2024-11-19 01:23:19

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
38页	994K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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中文翻译

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BM6104FV-C 数据手册

Datasheet

Gate Driver Providing Galvanic isolation Series

Isolation voltage 2500Vrms

1ch Gate Driver Providing Galvanic Isolation

BM6104FV-C

General Description

Key Specifications

The BM6104FV-C is a gate driver with isolation voltage

2500Vrms, I/O delay time of 150ns, and minimum input

pulse width of 90ns, and incorporates the fault signal

output functions, undervoltage lockout (UVLO) function,

and short current protection (SCP, DESAT) function.

 Isolation Voltage:

2500Vrms

24V

150ns(Max)

90ns(Max)

 Maximum Gate Drive Voltage:

 I/O Delay Time:

 Minimum Input Pulse Width:

Package

W(Typ) x D(Typ) x H(Max)

6.50mm x 8.10mm x 2.01mm

Features

SSOP-B20W

 Providing Galvanic Isolation

 Active Miller Clamping

 Fault Signal Output Function

(Adjustable Output Holding Time)

 Undervoltage Lockout Function

 Short Current Protection Function

(Adjustable Reset Time)

 Soft Turn-Off Function For Short Current Protection

(Adjustable Turn-Off Time)

 Supporting Negative VEE2

 Output State Feedback Function

 AEC-Q100 Qualified

Applications

 IGBT Gate Driver

 MOSFET Gate Driver

Typical Application Circuits

GND1

PROOUT

INA

Latch

OSFB

INB

VEE2

OUT1L

OUT1H

VCC2

VREG

OUT2

GND2

VEE2

ENA

FLTRLS

VCC1

FLT

Timer

FLT

UVLO

Regulator

UVLO

LOGIC

INA

ENA

LOGIC

TEST

GND1

SCPIN

1pin

Figure 1. For using 4-pin IGBT (for using SCP function)

GND1

OSFB

INB

INA

PROOUT

VEE2

Latch

OUT1L

OUT1H

VCC2

ENA

FLTRLS

VCC1

FLT

Timer

FLT

UVLO

Regulator

UVLO

VREG

OUT2

LOGIC

INA

ENA

GND2

VEE2

LOGIC

TEST

GND1

SCPIN

1pin

Figure 2. For using 3-pin IGBT (for using DESAT function)

○Product structure：Silicon integrated circuit ○This product is not designed protection against radioactive rays

.www.rohm.co

TSZ02201-0717ABH00030-1-2

23.Jan.2014 Rev.002

1/35

TSZ22111・14・001

12 3 4 5 6 7...38

中文翻译

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与BM6104FV-C相关器件

型号	品牌	获取价格	描述	数据表
BM6104FV-C_15	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6108FV-LB	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6108FV-LBE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6109FV-C	ROHM	获取价格	内置绝缘电压2500Vrms、输入输出延迟时间700ns、最小输入脉冲宽度600ns的绝缘
BM6112FV-C	ROHM	获取价格	BM6112FV-C is a gate driver with isolation voltage of 3750Vrms, I/O delay time of 150ns, a
BM6112HFV-C	ROHM	获取价格	BM6112HFV-C is a gate driver with isolation voltage of 3750Vrms, I/O delay time of 150ns,
BM61M22BFJ-C	ROHM	获取价格	本品为内置绝缘电压2500Vrms、最大输入输出延迟时间60ns、最小输入脉冲宽度60ns
BM61M41RFV-C	ROHM	获取价格	BM61M41RFV-C是绝缘耐压3750Vrms、输入输出延迟时间65n、最小输入脉冲宽
BM61S40RFV-C	ROHM	获取价格	BM61S40RFV-C是绝缘耐压3750Vrms、输入输出延迟时间65n、最小输入脉冲宽

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