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BM6104FV-CE2 PDF预览

BM6104FV-CE2

更新时间: 2024-11-22 01:15:59
品牌 Logo 应用领域
罗姆 - ROHM
页数 文件大小 规格书
39页 2844K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

BM6104FV-CE2 数据手册

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Datasheet  
Gate Driver Providing Galvanic isolation Series  
Isolation voltage 2500Vrms  
1ch Gate Driver Providing Galvanic Isolation  
BM6104FV-C  
General Description  
Key Specifications  
The BM6104FV-C is a gate driver with isolation voltage  
2500Vrms, I/O delay time of 150ns, and minimum input  
pulse width of 90ns, and incorporates the fault signal  
output functions, undervoltage lockout (UVLO) function,  
and short current protection (SCP, DESAT) function.  
Isolation Voltage:  
Maximum Gate Drive Voltage:  
I/O Delay Time:  
2500Vrms  
24V  
150ns(Max)  
90ns(Max)  
Minimum Input Pulse Width:  
Package  
SSOP-B20W  
W(Typ) x D(Typ) x H(Max)  
6.50mm x 8.10mm x 2.01mm  
Features  
Providing Galvanic Isolation  
Active Miller Clamping  
Fault Signal Output Function  
(Adjustable Output Holding Time)  
Undervoltage Lockout Function  
Short Current Protection Function  
(Adjustable Reset Time)  
Soft Turn-Off Function For Short Current Protection  
(Adjustable Turn-Off Time)  
Supporting Negative VEE2  
Output State Feedback Function  
UL1577 Recognized:File No. E356010  
AEC-Q100 Qualified(Note 1)  
(Note 1:Grade1)  
Applications  
IGBT Gate Driver  
MOSFET Gate Driver  
Typical Application Circuits  
GND1  
PROOUT  
VEE2  
INA  
+
-
OSFB  
INB  
Latch  
ENA  
S
Q
R
FB  
OUT1L  
OUT1H  
VCC2  
VREG  
OUT2  
GND2  
VEE2  
+
-
FLTRLS  
VCC1  
FLT  
Timer  
FLT  
UVLO  
Regulator  
UVLO  
LOGIC  
INA  
S
Q
R
ENA  
LOGIC  
TEST  
GND1  
+
-
SCPIN  
1pin  
Figure 1. For using 4-pin IGBT (for using SCP function)  
GND1  
OSFB  
INA  
PROOUT  
VEE2  
+
-
Latch  
S
Q
R
FB  
INB  
FLTRLS  
VCC1  
OUT1L  
OUT1H  
VCC2  
+
-
ENA  
Timer  
FLT  
UVLO  
Regulator  
UVLO  
FLT  
INA  
VREG  
OUT2  
LOGIC  
S
Q
R
ENA  
TEST  
GND2  
VEE2  
LOGIC  
+
-
GND1  
SCPIN  
1pin  
Figure 2. For using 3-pin IGBT (for using DESAT function)  
Product structureSilicon integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0717ABH00030-1-2  
25.Dec.2015 Rev.004  
© 2012 ROHM Co., Ltd. All rights reserved.  
1/35  
TSZ2211114001  

BM6104FV-CE2 替代型号

型号 品牌 替代类型 描述 数据表
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