Datasheet > BM6102FV-C_15

BM6102FV-C_15

更新时间： 2024-11-19 01:21:19

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
37页	2934K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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中文翻译

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BM6102FV-C_15 数据手册

Datasheet

Gate Driver Providing Galvanic isolation Series

Isolation voltage 2500Vrms

1ch Gate Driver Providing Galvanic Isolation

BM6102FV-C

General Description

Key Specifications

The BM6102FV-C is a gate driver with isolation voltage

2500Vrms, I/O delay time of 200ns, and minimum input

pulse width of 100ns, and incorporates the fault signal

output functions, undervoltage lockout (UVLO) function,

thermal protection function, and short current protection

(SCP, DESAT) function.

■

Isolation voltage:

Maximum gate drive voltage:

I/O delay time:

2500 [Vrms] (Min)

20 [V] (Max)

200 [ns] (Max)

100 [ns] (Max)

Minimum input pulse width:

Package

SSOP-B20W

W(Typ) x D(Typ) x H(Max)

6.50 ㎜×8.10 ㎜×2.01 ㎜

Features

■

Providing Galvanic Isolation

Active Miller Clamping

Fault signal output function

(Adjustable output holding time)

Undervoltage lockout function

Thermal protection function

(Adjustable threshold voltage)

Short current protection function

(Adjustable threshold voltage)

Soft turn-off function for short current protection

UL1577 Recognized:File No. E356010

AEC-Q100 Qualified^{(Note 1)}

■

Applications

■

Automotive isolated IGBT/MOSFET inverter gate drive

Automotive DC-DC converter

Industrial inverters systems

■

UPS systems

(Note 1:Grade1)

Typical Application Circuits

GND1

PROOUT

GND2

LOGIC

OUT1

INB

MASK

PRE

DRIVER

FLTRLS

VCC2

OUT2

LOGIC

VCC1

FLT

UVLO

MASK

TIMER

SCPIN

SCPTH

VTSTH

UVLO

INA

MASK

ECU

FLT

ENA

MASK

TEST

GND2

VTSIN

MASK

Sensor

GND1

Figure 1. For using 4-pin IGBT (for using SCP function)

GND1

PROOUT

GND2

OUT1

LOGIC

INB

MASK

PRE

DRIVER

FLTRLS

VCC2

LOGIC

OUT2

VCC1

FLT

UVLO

MASK

TIMER

SCPIN

SCPTH

VTSTH

UVLO

INA

MASK

ECU

FLT

ENA

FLT

MASK

TEST

GND2

VTSIN

MASK

Sensor

GND1

Figure 2. For using 3-pin IGBT (for using DESAT function)

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0818ABH00110-1-2

25.Dec.2015 Rev.003

1/33

TSZ22111・14・001

12 3 4 5 6 7...37

中文翻译

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与BM6102FV-C_15相关器件

型号	品牌	获取价格	描述	数据表
BM6102FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6103FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6103FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-C	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-C_15	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6104FV-CE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6108FV-LB	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6108FV-LBE2	ROHM	获取价格	Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
BM6109FV-C	ROHM	获取价格	内置绝缘电压2500Vrms、输入输出延迟时间700ns、最小输入脉冲宽度600ns的绝缘
BM6112FV-C	ROHM	获取价格	BM6112FV-C is a gate driver with isolation voltage of 3750Vrms, I/O delay time of 150ns, a

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