Datasheet > BM60213FV-CE2

BM60213FV-CE2

更新时间： 2024-11-18 21:22:27

品牌	Logo	应用领域
罗姆 - ROHM		驱动接口集成电路
页数	文件大小	规格书
25页	2004K
描述
Buffer/Inverter Based MOSFET Driver,

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技术参数
数据手册

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BM60213FV-CE2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	15 weeks	风险等级：	2.34
接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

BM60213FV-CE2 数据手册

Datasheet

1200 V High Voltage

High and Low Side Driver

BM60213FV-C

General Description

Key Specifications

The BM60213FV-C is high and low side drive IC which

operates up to 1200 V with bootstrap operation, which

can drive N-channel power MOSFET and IGBT.

Under-voltage Lockout (UVLO) function is built-in.



High-Side Floating Supply Voltage:

1200 V

24 V

75 ns (Max)

60 ns (Max)

Maximum Gate Drive Voltage:

Turn ON/OFF Time:

Logic Input Minimum Pulse Width:

Features

Package

SSOP-B20W

W(Typ) x D(Typ) x H(Max)

6.50 mm x 8.10 mm x 2.01 mm

 AEC-Q100 Qualified^{(Note 1)}

 High-Side Floating Supply Voltage 1200 V

 Under Voltage Lockout Function

 3.3 V and 5.0 V Input Logic Compatible

(Note 1) Grade 1

Applications

 MOSFET Gate Driver

 IGBT Gate Driver

SSOP-B20W

Typical Application Circuit

VCCB

Up to 1200 V

GND1

UVLO

ENA

INA

INB

GND2

ENA

INA

Pulse

Generator

INB

VCCA

OUTAH

OUTAL

VREG

VCCB

OUTBH

OUTBL

PGND

GND1

Regulator

Pre-

driver

C_VREG

Pre-

driver

C_VCCB

C_VCCA

GND2

LOAD

Pin 1

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

www.rohm.com

TSZ02201-0818ACH00050-1-2

26.Oct.2018 Rev.001

1/22

TSZ22111 • 14 • 001

12 3 4 5 6 7...25

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