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BM60213FV-C PDF预览

BM60213FV-C

更新时间: 2024-11-21 11:08:23
品牌 Logo 应用领域
罗姆 - ROHM 驱动双极性晶体管驱动器
页数 文件大小 规格书
25页 2004K
描述
BM60213FV-C是可驱动使用阴极负载方式的Nch-MOSFET及IGBT的1200V高耐压高边/低边驱动器。内置低电压时误动作防止功能(UVLO)。

BM60213FV-C 数据手册

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Datasheet  
1200 V High Voltage  
High and Low Side Driver  
BM60213FV-C  
General Description  
Key Specifications  
The BM60213FV-C is high and low side drive IC which  
operates up to 1200 V with bootstrap operation, which  
can drive N-channel power MOSFET and IGBT.  
Under-voltage Lockout (UVLO) function is built-in.  
High-Side Floating Supply Voltage:  
1200 V  
24 V  
75 ns (Max)  
60 ns (Max)  
Maximum Gate Drive Voltage:  
Turn ON/OFF Time:  
Logic Input Minimum Pulse Width:  
Features  
Package  
SSOP-B20W  
W(Typ) x D(Typ) x H(Max)  
6.50 mm x 8.10 mm x 2.01 mm  
AEC-Q100 Qualified(Note 1)  
High-Side Floating Supply Voltage 1200 V  
Under Voltage Lockout Function  
3.3 V and 5.0 V Input Logic Compatible  
(Note 1) Grade 1  
Applications  
MOSFET Gate Driver  
IGBT Gate Driver  
SSOP-B20W  
Typical Application Circuit  
VCCB  
Up to 1200 V  
NC  
GND1  
UVLO  
UVLO  
S
R
ENA  
INA  
INB  
GND2  
NC  
ENA  
INA  
Pulse  
Generator  
Q
INB  
VCCA  
OUTAH  
OUTAL  
VREG  
VCCB  
OUTBH  
OUTBL  
PGND  
GND1  
Regulator  
Pre-  
driver  
CVREG  
NC  
NC  
Pre-  
driver  
CVCCB  
CVCCA  
GND2  
TO  
LOAD  
NC  
Pin 1  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0818ACH00050-1-2  
26.Oct.2018 Rev.001  
© 2018 ROHM Co., Ltd. All rights reserved.  
1/22  
TSZ22111 14 001  
 
 
 
 
 
 

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