Datasheet > BM60015FV-LBE2

BM60015FV-LBE2

更新时间： 2024-11-19 01:21:19

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
29页	1158K
描述
Isolation voltage 3750Vrms 1ch Gate Driver Providing Galvanic Isolation

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BM60015FV-LBE2 数据手册

Datasheet

Gate Driver Providing Galvanic isolation Series

Isolation voltage 3750Vrms

1ch Gate Driver Providing Galvanic Isolation

BM60015FV-LB

General Description

Key Specifications

This is the product guarantees long time support in

Industrial market.

¢ Isolation voltage:

3750Vrms

24V

75ns(Max)

60ns

¢ Maximum gate drive voltage:

¢ I/O delay time:

¢ Minimum input pulse width:

The BM60016FV-C is a gate driver with an isolation

voltage of 3750Vrms, I/O delay time of 75ns, and

minimum input pulse width of 60ns. It incorporates the

Under-voltage Lockout (UVLO) function and Miller clamp

function.

Package

W(Typ) x D(Typ) x H(Max)

3.5mm x10.2mm x 1.9mm

Features

SSOP-B10W

¢ Long Time Support Product for Industrial Applications.

¢ Providing Galvanic Isolation

¢ Active Miller Clamping

¢ Under-voltage Lockout function

¢ Reinforced insulation according VDE 0884-

10(pending)

¢ Recognized UL1577: 3750Vrms / 1min (pending)

Applications

¢ Industrial Equipment

¢ IGBT Gate Driver

¢ MOSFET Gate Driver

Typical Application Circuits

GND2

VCC2

OUT

GND1

UVLO1

VCC1

UVLO2

Pre-

driver

INA

INB

Pulse

Generator

C_VCC2

C_VCC1

GND1

GND2

1pin

Figure 1. Application Circuits (IGBT Gate Driver)

GND2

VCC2

OUT

GND1

VCC1

INA

UVLO1

UVLO2

Pre-

driver

Pulse

Generator

INB

C_VCC2

C_VCC1

GND2

GND1

1pin

Figure 2. Application Circuits (MOSFET Gate Driver)

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

.www.rohm.com

TSZ22111 • 15 • 001

TSZ02201-0818ABZ00050-1-2

25.Jul.2016 Rev.001

1/25

12 3 4 5 6 7...29

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