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BM60059FV-C PDF预览

BM60059FV-C

更新时间: 2024-11-21 11:16:07
品牌 Logo 应用领域
罗姆 - ROHM 开关栅极驱动脉冲驱动器
页数 文件大小 规格书
49页 1500K
描述
内置绝缘电压2500Vrms、输入输出延迟时间450ns、最小输入脉冲宽度400ns的绝缘元件的栅极驱动器。内置故障信号输出功能、低电压时误动作防止功能(UVLO)、短路保护功能(SCP)、米勒钳位功能、温度监测功能、开关控制、栅极恒流驱动功能、栅极状态监视功能。

BM60059FV-C 数据手册

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Datasheet  
Gate Driver Providing Galvanic Isolation Series  
Isolation Voltage 2500 Vrms  
1ch Gate Driver Providing Galvanic Isolation  
BM60059FV-C  
General Description  
Key Specifications  
The BM60059FV-C is a gate driver with an isolation  
voltage of 2500 Vrms. It has an I/O delay time of 450  
ns, minimum input pulse width of 400 ns, and  
incorporates the fault signal output function, under  
voltage lockout (UVLO) function, short circuit protection  
(SCP) function, active miller clamping function,  
temperature monitoring, switching controller function,  
gate constant current driving function and output state  
feedback function.  
Isolation Voltage:  
2500 Vrms  
24 V  
450 ns (Max)  
400 ns  
Maximum Gate Drive Voltage:  
I/O Delay Time:  
Minimum Input Pulse Width:  
Package  
SSOP-B28W  
W (Typ) x D (Typ) x H (Max)  
9.2 mm x 10.4 mm x 2.4 mm  
Features  
AEC-Q100 Qualified(Note 1)  
Fault Signal Output Function  
Under Voltage Lockout Function  
Short Circuit Protection Function  
Fast Turn Off Function for Short Circuit Protection  
Soft Turn Off Function for Short Circuit Protection  
(Adjustable turn off time)  
Active Miller Clamping  
Temperature Monitor  
Switching Controller  
Gate Constant Current Driving Function  
Output State Feedback Function  
UL1577 Recognized: File No. E356010  
(Note 1) Grade1  
Applications  
Automotive Inverter System  
Automotive DCDC Converter  
Industrial Inverter System  
UPS System  
Typical Application Circuit  
GND1  
FLT  
GND2  
OUT2  
DIS  
OUT1L  
OUT1HG  
OUTREF  
VCC2  
INA  
ECU  
TO_SEL  
SENSOR  
OSFB  
FB  
VCC2  
RTC  
TC  
TO2  
COMP  
V_BATT  
VREG  
FET_G  
SENSE  
GND1  
TO1  
V_BATT  
Filter  
Filter  
SCPIN2  
SCPIN1  
PROOUT1  
PROOUT2  
GND2  
snubber  
GND1  
VCC2  
GND2  
+
CVCC2  
GND2  
GND1  
CVBATT  
CVREG  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
TSZ02201-0818ACH00070-1-2  
28.Jul.2021 Rev.002  
© 2017 ROHM Co., Ltd. All rights reserved.  
1/46  
TSZ22111 14 001  
 
 
 
 
 
 

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