Datasheet > BM60210FV-C

BM60210FV-C

更新时间： 2024-10-02 01:21:19

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
27页	1115K
描述
High Voltage High & Low-side, Gate Driver

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中文翻译

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数据手册

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BM60210FV-C 数据手册

Datasheet

1200V High Voltage

High & Low-side, Gate Driver

BM60210FV-C

General Description

Key Specifications

The BM60210FV-C is a monolithic high and low side

gate drive IC, which can be drive high speed power

MOSFET and IGBT driver with bootstrap operation.

The floating channel can be used to driven an N-channel

power MOSFET or IGBT in the high side configuration

which operates up to 1200V.

It incorporates the fault signal output functions,

Under-voltage Lockout (UVLO) function and Miller clamp

function.



High-side floating supply voltage:

1200V

10V to 24V

Output voltage range:

Min Output Current:

Turn ON/Off time:

Delay Matching:

Minimum input pulse width:

Operating temperature range:

75ns(Max)

25ns(Max)

60ns(Max)

-40°C to 125°C

Features

Package

W(Typ) x D(Typ) x H(Max)

6.50mm x 8.10mm x 2.01mm

 Floating Channels for Bootstrap Operation to +1200V.

 Gate drive supply range from 10V to24V

 Built-in Under Voltage Lockout for Both Channels

 3.3V and 5.0V Input Logic Compatible

 Active Miller Clamping

SSOP-B20W

 AEC-Q100 Qualified ^{(Note 1)}

(Note 1:Grade1)

Applications

 MOSFET gate driver

 IGBT gate driver

Typical Application Circuits

VCCB

Up to 1200V

GND2

GND1

UVLO

ENA

INA

INB

ENA

INA

Pulse

Generator

INB

VCCA

OUTAH

OUTAL

MCA

VREG

VCCB

OUTBH

OUTBL

MCB

Regulator

Pre-

driver

C_VREG

Pre-

driver

C_VCCA

C_VCCB

GND2

LOAD

GND1

1pin

Figure 1. Typical Application Circuits

www.rohm.co.jp

TSZ02201-0818ABH00140-1-2

19. Feb. 2016 Rev.001

1/23

TSZ22111・14・001

12 3 4 5 6 7...27

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