5秒后页面跳转
BM60054FV-CE2 PDF预览

BM60054FV-CE2

更新时间: 2024-01-15 15:57:01
品牌 Logo 应用领域
罗姆 - ROHM
页数 文件大小 规格书
40页 3164K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

BM60054FV-CE2 数据手册

 浏览型号BM60054FV-CE2的Datasheet PDF文件第2页浏览型号BM60054FV-CE2的Datasheet PDF文件第3页浏览型号BM60054FV-CE2的Datasheet PDF文件第4页浏览型号BM60054FV-CE2的Datasheet PDF文件第5页浏览型号BM60054FV-CE2的Datasheet PDF文件第6页浏览型号BM60054FV-CE2的Datasheet PDF文件第7页 
Datasheet  
Gate Driver Providing Galvanic isolation Series  
Isolation voltage 2500Vrms  
1ch Gate Driver Providing Galvanic Isolation  
BM60054FV-C  
General Description  
Key Specifications  
The BM60054FV-C is a gate driver with isolation voltage  
2500Vrms, I/O delay time of 110ns, and a minimum input  
pulse width of 90ns. Fault signal output function, ready  
signal output function, under voltage lockout (UVLO)  
function, short current protection (SCP) function, and  
switching controller function are all built-in.  
Isolation Voltage:  
Maximum Gate Drive Voltage:  
I/O Delay Time:  
2500Vrms  
20V(Max)  
110ns(Max)  
90ns(Max)  
Minimum Input Pulse Width:  
Package  
SSOP-B28W  
W(Typ) x D(Typ) x H(Max)  
9.2 mm x 10.4 mm x 2.4 mm  
Features  
Provides Galvanic Isolation  
Fault Signal Output Function  
Ready Signal Output Function  
Under Voltage Lockout Function  
Short Circuit Protection Function  
Soft Turn-Off Function for Short Circuit Protection  
(Adjustable Turn-OFF time)  
Thermal Protection Function  
Active Miller Clamping  
Switching Controller Function  
Output State Feedback Function  
UL1577 Recognized:File No. E356010  
AEC-Q100 Qualified(Note 1)  
(Note 1:Grade1)  
Applications  
Driving IGBT Gate  
Driving MOSFET Gate  
Typical Application Circuit  
Figure 1. Typical Application Circuit  
Product structureSilicon integrated circuit This product has no designed protection against radioactive rays  
.
www.rohm.co.jp  
TSZ02201-0818ABH00080-1-2  
25.Dec.2015 Rev.002  
© 2014 ROHM Co., Ltd. All rights reserved.  
1/36  
TSZ2211114001  

与BM60054FV-CE2相关器件

型号 品牌 获取价格 描述 数据表
BM60055FV-C ROHM

获取价格

1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage
BM60055FV-CE2 ROHM

获取价格

1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage
BM60059FV-C ROHM

获取价格

内置绝缘电压2500Vrms、输入输出延迟时间450ns、最小输入脉冲宽度400ns的绝缘
BM60060FV-C ROHM

获取价格

内置绝缘电压2500Vrms、输入输出延迟时间210ns、最小输入脉冲宽度90ns的绝缘元
BM60210FV-C ROHM

获取价格

High Voltage High & Low-side, Gate Driver
BM60210FV-CE2 ROHM

获取价格

High Voltage High & Low-side, Gate Driver
BM60212FV-C ROHM

获取价格

BM60212FV-C是可驱动使用阴极负载方式的Nch-MOSFET及IGBT的1200V
BM60213FV-C ROHM

获取价格

BM60213FV-C是可驱动使用阴极负载方式的Nch-MOSFET及IGBT的1200V
BM60213FV-CE2 ROHM

获取价格

Buffer/Inverter Based MOSFET Driver,
BM6031B COOPER

获取价格

Supplementary Fuseblocks BM Series