Datasheet > BM60014FV-E2

BM60014FV-E2

更新时间： 2024-11-21 01:12:35

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
28页	858K
描述
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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BM60014FV-E2 数据手册

Datasheet

Gate Driver Providing Galvanic isolation Series

Isolation voltage 2500Vrms

1ch Gate Driver Providing Galvanic Isolation

BM60014FV-C

General Description

Key Specifications

The BM60014FV-C is a gate driver with an isolation

voltage of 2500Vrms, I/O delay time of 120ns, and

minimum input pulse width of 70ns. It incorporates the

fault signal output functions, Under-voltage Lockout

(UVLO) function and Miller clamp function.



Isolation voltage:

2500Vrms

24V

120ns(Max)

70ns(Max)

Maximum gate drive voltage:

I/O delay time:

Minimum input pulse width:

Features

Package

W(Typ) x D(Typ) x H(Max)

6.50mm x 8.10mm x 2.01mm



Providing Galvanic Isolation

Active Miller Clamping

Fault signal output function

Under-voltage Lockout function

AEC-Q100 Qualified

SSOP-B20W

Applications

 IGBT Gate Driver

 MOSFET Gate Driver

Typical Application Circuits

GND1

GND2

UVLO2

UVLO1

VCC1

INA

VCC2

OUT

Pre-

driver

Pulse

Generator

INB

XFLT

UVLO1

GND2

GND1

1pin

Figure 1. Application Circuits (IGBT Gate Driver)

GND1

GND2

UVLO2

UVLO1

VCC1

INA

VCC2

OUT

Pre-

Pulse

Generator

driver

INB

XFLT

UVLO1

GND2

GND1

1pin

Figure 2. Application Circuits (MOSFET Gate Driver)

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

.www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0P5P0BH00010-1-2

25.Nov.2013 Rev.001

1/25

12 3 4 5 6 7...28

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