BLF245C

更新时间： 2024-11-05 12:50:03

品牌	Logo	应用领域
ASI		/
页数	文件大小	规格书
1页	39K
描述
RF POWER MOSFET

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BLF245C 数据手册

BLF245C

RF POWER MOSFET

N-Channel Enhancement Mode

DESCRIPTION:

The ASI BLF245C is a VDMOS

transistor designed for large signal

amplifier applications in the VHF

frequency range.

PACKAGE STYLE .400 8L FLG

FULL R

FEATURES INCLUDE:

.1925

.125

• P_G= 16 dB Typical at 175 MHz

• 30:1 Load VSWR Capability

• Omnigold™ metalization system

4 x .060 R

MINIMUM

MAXIMUM

inches mm

DIM

inches

MAXIMUM RATINGS

.030 / 0.76

.360 / 9.14

.130 / 3.30

.115 / 2.92

.065 / 1.65

.380 / 9.65

.125 / 3.18

.075 / 1.91

6.0 A

65 V

I_D

V_DS

V_GS

P_DISS

T_J

.390 / 9.91

.765 / 19.43

.655 / 16.64

.905 / 22.99

.430 / 10.92

.007 / 0.18

.130 / 3.30

.175 / 4.45

.280 / 7.11

.405 / 10.29

.735 / 18.67

.645 / 16.38

.895 / 22.73

.420 / 10.67

.003 / 0.08

.120 / 3.05

.159 / 4.04

±20 V

68 W @ T_C= 25 °C

-65 °C to +150 °C

-65 °C to +200 °C

1.8 °C/W

T_STG

θ_JC

.395 / 10.03

COMMON SOURCE

NONE

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_DSS

I_DSS

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_D= 10 mA

V_DS= 28 V

V_DS= 0 V

µA

V_GS= 0 V

2.0

1.0

4.5

I_GSS

V_GS= ±20 V

I_D= 10 mA

I_D= 1.5 A

V_GS(th)

g_fs

V_DS= 10 V

2.0

1.2

1.9

C_iss

125

V_DS= 28 V

V_GS= 0 V

f = 1.0 MHz

7.0

C_oss

C_rss

P_G

η_D

_DS= 28 V

I_DQ= 25 mA

P_out= 30 W

f = 150 MHz

V_SWR= 30:1 AT ALL PHASE ANGLES

NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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