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BLF246,112 PDF预览

BLF246,112

更新时间: 2024-01-18 14:58:57
品牌 Logo 应用领域
其他 - ETC 局域网放大器晶体管
页数 文件大小 规格书
15页 202K
描述
RF FET NCHA 65V 18DB SOT121B

BLF246,112 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-CRFM-F4
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.38其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (ID):13 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

BLF246,112 数据手册

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BLF246  
VHF power MOS transistor  
Rev. 5 — 1 September 2015  
Product data sheet  
IMPORTANT NOTICE  
Dear customer,  
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as  
an independent company under the new trade name Ampleon, which will be used  
in future data sheets together with new contact details.  
In data sheets, where the previous Philips references is mentioned, please use  
the new links as shown below.  
http://www.philips.semiconductors.com use http://www.ampleon.com  
http://www.semiconductors.philips.com use http://www.ampleon.com (Internet)  
sales.addresses@www.semiconductors.philips.com use  
http://www.ampleon.com/sales  
The copyright notice at the bottom of each page (or elsewhere in the document,  
depending on the version)  
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -  
is replaced with:  
- © Ampleon B.V. (year). All rights reserved. -  
If you have any questions related to the data sheet, please contact our nearest  
sales office (details via http://www.ampleon.com/sales).  
Thank you for your cooperation and understanding,  
Ampleon  

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