Datasheet > BL130N10T-3DL8

BL130N10T-3DL8

更新时间： 2024-11-25 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	716K
描述
100V, N Channel MOSFETs

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数据手册

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BL130N10T-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL130N10T-3DL8

Features



Low R_DS(ON)& FOM

Extremely low switching loss

Excellent stability and uniformity

HBM: JESD22-A114-B: 1A

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

130N10T

BL130N10T-3DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

200

°C

62.5

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.9

°C /W

MTM1250A: August 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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