Datasheet > BL14P10B

BL14P10B

更新时间： 2024-11-12 17:01:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	523K
描述
14A, 100V, 79W, P Channel, Power MOSFETs

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BL14P10B 数据手册

P-Channel Enhancement Mode MOSFET

BL14P10B

Features



Power management

High performance trench technology for extremely low R_DS(on)

Load switch

Low gate charge

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

BL14P10B

50 pcs / Tube & 800 pcs / Tape & Reel

14P10B

Maximum Ratings (@ T_J= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-100

±20

-14

-10

-56

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C, V_GS= -10V)

Continuous Drain Current (T_C= 100°C, V_GS= -10V)

Pulsed Drain Current (T_C= 25°C ) ^*1

I_D

I_DM

Avalanche Energy, Single Pulsed ^*2

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Maximum Power Dissipation (T_C= 25°C )

Maximum Power Dissipation (T_A= 25°C )

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

3.8

P_D

R_θJA

R_θJC

T_J

°C /W

°C

1.6

-55 ~ +150

T_STG

°C

MTM0677A: February 2022

www.gmesemi.com

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