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BL130P04-S8 PDF预览

BL130P04-S8

更新时间: 2024-11-25 17:02:03
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 744K
描述
-40V, P Channel MOSFETs

BL130P04-S8 数据手册

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P-Channel Enhancement Mode MOSFET  
BL130P04-S8  
Features  
Super low gate charge  
Green device available  
Excellent cdV / dt effect decline  
Advanced high cell density trench technology  
JESD22-A114-B ESD rating of class 1B per human body model  
Mechanical Data  
Case: SOP-8  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
SOP-8  
Ordering Information  
Part Number  
Package  
SOP-8  
Shipping Quantity  
Marking Code  
BL130P04-S8  
4000 pcs / Tape & Reel  
130P04  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
-40  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 100°C) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TA = 25°C) *1  
-11  
A
ID  
-7  
A
IDM  
EAS  
PD  
-80  
A
70  
mJ  
W
°C  
°C  
2.5  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
13  
41  
25  
50  
°C /W  
°C /W  
MTM0161A: August 2023 [2.2]  
www.gmesemi.com  
1

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