Datasheet > BL13N50

BL13N50

更新时间： 2024-11-12 14:54:27

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	1299K
描述
"BL13N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications."

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BL13N50 数据手册

BL13N50

Power MOSFET

1．Description

BL13N50, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable device

for SMPS, high speed switching and general

purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

500

Unit

R_DS(ON).Typ

Qg._Typ

0.37

Ω

FEATURES



Fast Switching

Low Crss (typical 12pF )

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS



High frequency switching mode power supply

Electronic ballast



ORDERING INFORMATION

Ordering Codes

BL13N50-P

BL13N50-A

Package

TO-220

TO-220F

Product Code

BL13N50

Packing

Tube

BL13N50-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL13N50:500V 13A

(2) A:TO-220F P:TO-220

BL13N50

Rev 1.1

4/2019

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