Datasheet > BL13N50F

BL13N50F

更新时间： 2024-11-12 17:01:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	272K
描述
13A, 500V, 140W, N Channel, Power MOSFETs

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BL13N50F 数据手册

Product Specification

13A, 500V N-Channel Power Mosfet

FEATURES

BL13N50F



R_DS(ON)=0.45Ω@ V_GS= 10V

Low reverse transfer Capacitance

( C_RSS= typical 27.5 pF )



Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL13N50F

ITO-220AB

50 pcs / Tube

13N50F

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_D

Parameter

Value

Units

Drain-Source voltage

Gate -Source voltage

500

±30

13.0

Continuous Drain Current

I_DM

Pulsed Drain Current

E_AS

E_AR

Avalanche Energy

Single Pulsed

Repetitive

684

19.5

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

140

V/ns

R_θJA

T_J

Thermal resistance,Junction-to-Ambient

Junction Temperature

0.33

℃/W

℃

-55 to +150

T_STG

Storage Temperature

℃

MTM5030A: November 2018

www.gmesemi.com

12 3

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