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BL13P06-3DL8 PDF预览

BL13P06-3DL8

更新时间: 2024-11-12 17:01:15
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 726K
描述
-60V, P Channel MOSFETs

BL13P06-3DL8 数据手册

 浏览型号BL13P06-3DL8的Datasheet PDF文件第2页浏览型号BL13P06-3DL8的Datasheet PDF文件第3页浏览型号BL13P06-3DL8的Datasheet PDF文件第4页浏览型号BL13P06-3DL8的Datasheet PDF文件第5页浏览型号BL13P06-3DL8的Datasheet PDF文件第6页 
P-Channel Enhancement Mode MOSFET  
BL13P06-3DL8  
Features  
High power and current handing capability  
JESD22-A114-B ESD rating of class 1C per human body model  
Typical Applications  
Load switch  
Power management functions  
PWM Applications  
Mechanical Data  
Case: PDFN3×3-8L  
Molding Compound, UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208  
PDFN3×3-8L  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
BL13P06-3DL8  
PDFN3×3-8L  
5000 pcs / Tape & Reel  
13P06  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
VDSS  
Value  
Unit  
-60  
±20  
V
V
Gate-to-Source Voltage  
VGSS  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Continuous Drain Current (TA = 25°C) *1  
Continuous Drain Current (TA = 100°C) *1  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
Single Pulse Avalanche Energy *4  
Power Dissipation (TC = 25°C )  
-13.5  
-8  
A
A
ID  
-3.1  
A
-2  
A
IDM  
EAS  
PD  
-23  
A
14  
mJ  
W
°C  
°C  
42  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
MTM0540A: August 2023 [2.3]  
www.gmesemi.com  
1

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