Datasheet > BL13P06-3DL8

BL13P06-3DL8

更新时间： 2024-04-09 19:00:16

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	726K
描述
-60V, P Channel MOSFETs

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BL13P06-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

BL13P06-3DL8

Features



High power and current handing capability

JESD22-A114-B ESD rating of class 1C per human body model

Typical Applications



Load switch

Power management functions

PWM Applications

Mechanical Data



Case: PDFN3×3-8L

Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL13P06-3DL8

PDFN3×3-8L

5000 pcs / Tape & Reel

13P06

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

-60

±20

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_C= 25°C )

-13.5

-8

I_D

-3.1

-2

I_DM

E_AS

P_D

-23

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

MTM0540A: August 2023 [2.3]

www.gmesemi.com

12 3 4 5 6

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