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BL13N50B PDF预览

BL13N50B

更新时间: 2024-11-25 17:02:11
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
3页 266K
描述
13A, 500V, 106W, N Channel, Power MOSFETs

BL13N50B 数据手册

 浏览型号BL13N50B的Datasheet PDF文件第2页浏览型号BL13N50B的Datasheet PDF文件第3页 
N-Channel Enhancement Mode MOSFET  
BL13N50B  
Features  
Low reverse transfer Capacitance.  
Fast switching capability.  
Avalanche energy specified.  
Improved dv/dt capability, high ruggedness.  
Typical Applications  
Power switch circuit of adaptor and charger.  
Mechanical Data  
Case: TO-263  
Molding Compound, UL Flammability Classification Rating  
94V-0.  
Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-  
202, Method 208.  
TO-263  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
BL13N50B  
TO-263  
50 pcs / Tube or 800 pcs / Tape & Reel  
13N50B  
Maximum Ratings (@TA=25unless otherwise specified)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Value  
Units  
V
Drain-Source Voltage  
Gate -Source Voltage  
500  
±30  
V
Continuous Drain Current  
Pulsed Drain Current  
Power Dissipation  
13  
A
IDM  
52  
106  
A
PD  
W
Junction-to-Case  
4
/W  
RθJC  
TJ  
Junction Temperature  
Storage Temperature Range  
-55 to +150  
-55 to +150  
TSTG  
MTM0022A: October 2019  
www.gmesemi.com  
1

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