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BL13N25L PDF预览

BL13N25L

更新时间: 2024-11-25 14:54:35
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
15页 1198K
描述
BL13N25L, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

BL13N25L 数据手册

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BL13N25L  
Power MOSFET  
1Description  
BL13N25L, the silicon N-channel Enhanced  
MOSFETs, is obtained by advanced MOSFET  
technology which reduce the conduction loss,  
improve switching performance and enhance the  
avalanche energy. The transistor is suitable  
device for SMPS, high speed switching and  
general purpose applications.  
KEY CHARACTERISTICS  
Parameter  
VDS@Tj.max  
ID  
Value  
250  
13  
Unit  
V
A
RDS(ON).Typ  
FEATURES  
0.23  
Fast Switching  
Low Crss  
100% avalanche tested  
Improved dv/dt capability  
RoHS product  
APPLICATIONS  
High frequency switching mode power supply  
ORDERING INFORMATION  
Ordering Codes  
BL13N25L-P  
BL13N25L-A  
BL13N25L-U  
BL13N25L-D  
Package  
Product Code  
BL13N25L  
Packing  
Tube  
Tube  
Tube  
Tape Reel  
TO-220  
TO-220F  
TO-251  
TO-252  
BL13N25L-A  
XXXXProduct Code  
(2) Package type  
(1) Chip name  
XXXX  
YYWW ZZ  
SSSSS  
YYWWYear&Week  
ZZAssembly Code  
SSSSSLot Code  
(1)BL13N25L:250V 13A  
(2) A:TO-220F P:TO-220  
U:TO-251 D:TO-252  
BL13N25L  
Rev 1.0  
12/2019  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  

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