Datasheet > BL13N25

BL13N25

更新时间： 2024-11-12 14:54:43

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	1197K
描述
BL13N25R, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL13N25 数据手册

BL13N25

Power MOSFET

1．Description

BL13N25, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

250

Unit

R_DS(ON).Typ

FEATURES

0.23

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL13N25-P

BL13N25-A

BL13N25-U

BL13N25-D

Package

Product Code

BL13N25

Packing

Tube

Tape Reel

TO-220

TO-220F

TO-251

TO-252

BL13N25-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL13N25:250V 13A

(2) A:TO-220F P:TO-220

U:TO-251 D:TO-252

BL13N25

Rev 1.0

12/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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