Datasheet > BL130P04-3DL8

BL130P04-3DL8

更新时间： 2024-09-25 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	589K
描述
49A, 40V, 50W, P Channel, Power MOSFETs

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BL130P04-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

BL130P04-3DL8

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

BL130P04-3DL8

5000 pcs / Tape & Reel

130P04

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-40

±20

-49

Gate-to-Source Voltage

Continuous Drain Current (V_GS=10V, T_C= 25°C)

Continuous Drain Current (V_GS=10V, T_C= 100°C)

Pulsed Drain Current^{*2 *4}

I_D

-31

I_DM

-268

125

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

2.5

-55 ~ +150

T_STG

°C

MTM0684A: February 2022

www.gmesemi.com

12 3 4 5

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