Datasheet > BL130P04F

BL130P04F

更新时间： 2024-11-12 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	532K
描述
33A, 40V, 25W, P Channel, Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL130P04F 数据手册

P-Channel Enhancement Mode MOSFET

BL130P04F

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 2 per human body model

Mechanical Data



Case: ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

ITO-220AB

Ordering Information

Part Number

Package

ITO-220AB

Shipping Quantity

Marking Code

BL130P04F

50 pcs / Tube

130P04F

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-40

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*2

Power Dissipation (T_C= 25°C)

-33

I_D

-21

I_DM

E_AS

P_D

-132

125

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

R_θJC

R_θJA

°C /W

MTM1161A: March 2023 [2.0]

www.gmesemi.com

12 3 4 5

中文翻译

下载PDF

与BL130P04F相关器件

型号	品牌	获取价格	描述	数据表
BL130P04-S8	BL Galaxy Electrical	获取价格	-40V, P Channel MOSFETs
B-L131	MOLEX	获取价格	Wire Terminal, 2mm2
BL13232E	BELLING	获取价格	The BL13232E consists of two drivers, two rec
BL-13A0-0264	MARL	获取价格	Optoelectronic Device,
BL-13B1-0267	MARL	获取价格	Optoelectronic Device,
BL-13C1-0268	MARL	获取价格	Optoelectronic Device,
BL-13D0-0266	MARL	获取价格	Optoelectronic Device,
BL-13E0-0265	MARL	获取价格	Optoelectronic Device,
BL-13F0-0129	MARL	获取价格	Optoelectronic Device,
BL13N25	BELLING	获取价格	BL13N25R, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technolog