Datasheet > BL1308ESDW

BL1308ESDW

更新时间： 2024-11-25 17:02:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	525K
描述
1.4A, 30V, 0.32W, N Channel, Power MOSFETs

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BL1308ESDW 数据手册

N-Channel Enhancement Mode MOSFET

BL1308ESDW

Features



Advanced trench cell design



Extremely low threshold voltage

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

SOT-363

Shipping Quantity

Marking Code

BL1308ESDW

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±12

1.4

1.1

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 70°C)

Pulsed Drain Current ^*2

I_D

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

T_J

0.32

390

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0506A: December 2023 [2.1]

www.gmesemi.com

12 3 4 5

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