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BL1308ESL PDF预览

BL1308ESL

更新时间: 2024-11-28 17:01:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 388K
描述
1.4A, 30V,0.15W, N Channel, Power MOSFETs

BL1308ESL 数据手册

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N-Channel Enhancement Mode MOSFET  
BL1308ESL  
Features  
Advanced trench cell design  
Extremely low threshold voltage  
Mechanical Data  
Case: DFN1006-3  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
DFN1006-3  
Ordering Information  
Part Number  
Package  
DFN1006-3  
Shipping Quantity  
Marking Code  
BL1308ESL  
10000 pcs / Tape & Reel  
KG  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
30  
±12  
1.4  
1.1  
6
V
V
A
A
A
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C )  
Continuous Drain Current (TC = 70°C)  
Pulsed Drain Current *2  
ID  
IDM  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation  
PD  
RθJA  
TJ  
0.15  
834  
W
°C /W  
°C  
Thermal Resistance Junction-to-Air *1  
Operating Junction Temperature Range  
Storage Temperature Range  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0685A: December 2023 [2.1]  
www.gmesemi.com  
1

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