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BL10N10I PDF预览

BL10N10I

更新时间: 2024-04-09 18:59:50
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 512K
描述
10A, 100V, 27W, N Channel, Power MOSFETs

BL10N10I 数据手册

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N-Channel Enhancement Mode MOSFET  
BL10N10I  
Features  
RDS(ON) 150mΩ @ VGS = 10V  
Low gate charge  
Applications  
Networking DC-DC power system  
Load switch  
Mechanical Data  
Case: TO-251  
Molding Compound: UL Flammability Classification Rating 94V-0  
TO-251  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
Ordering Information  
Part Number  
Package  
TO-251  
Shipping Quantity  
Marking Code  
BL10N10I  
80 pcs / Tube  
10N10I  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
ID  
100  
±20  
10  
V
V
A
A
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C) *1  
Pulsed Drain Current *2  
IDM  
40  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C) *3  
Thermal Resistance Junction-to-Case  
Operating Junction Temperature Range  
Storage Temperature Range  
PD  
RθJC  
TJ  
27  
W
°C /W  
°C  
4.6  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0344A: November 2020  
www.gmesemi.com  
1

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