Datasheet > BL10N65F

BL10N65F

更新时间： 2024-11-25 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	284K
描述
10A, 650V, 40W, N Channel, Power MOSFETs

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BL10N65F 数据手册

Product Specification

Silicon N-Channel Power MOSFET

FEATURES

BL10N65F



Fast Switching

ESD Improved Capability

Low Gate Charge (Typical Data:38nC)

Low Reverse transfer capacitances(Typical:15pF)

100% Single Pulse avalanche energy Test

APPLICATIONS



Power switch circuit of adaptor and charger.

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL10N65F

ITO-220AB

50 pcs / Tube

10N65F

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-to-Source voltage

650

±30

V_GS

Gate -Source voltage

Continuous Drain current

I_D

Continuous Drain current Tc=100°C

6.3

I_DM

Pulsed Drain current

Single Pulse Avalanche Energy

E_AS

P_D

500

Power Dissipation

150，-55 to +150

T_J,T_stg

Operating Junction and StorageTemperature

℃

a1: Repetitive rating; pulse width limited by maximum junction temperature

MTM5025A

www.gmesemi.com

12 3 4

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