Datasheet > BL10N80KF

BL10N80KF

更新时间： 2024-04-09 19:00:34

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	941K
描述
800V, N Channel, HV Planar MOSFETs

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中文翻译

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数据手册

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BL10N80KF 数据手册

N-Channel Enhancement Mode MOSFET

BL10N80K BL10N80KF

Features



Fast switching

ESD improved capability

Low gate charge

Low reverse transfer capacitances

Mechanical Data



Case: TO-220AB, ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-220AB

ITO-220AB

Ordering Information

Part Number

BL10N80K

Package

TO-220AB

ITO-220AB

Shipping Quantity

50 pcs / Tube

Marking Code

10N80K

BL10N80KF

50 pcs / Tube

10N80KF

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

800

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current

I_D

6.4

I_DM

Single Pulse Avalanche Energy ^*2

Power Dissipation (TO-220AB, T_C= 25°C)

Power Dissipation (ITO-220AB, T_C= 25°C)

Operating Junction Temperature Range

Storage Temperature Range

E_AS

350

°C

156

P_D

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

TO-220AB

ITO-220AB

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

R_θJC

R_θJA

0.8

2.1

°C /W

62.5

MTM1386A: August 2023 [1.0]

www.gmesemi.com

12 3 4 5

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