Datasheet > BL10N70

BL10N70

更新时间： 2024-11-06 14:55:11

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
13页	1134K
描述
BL10N70, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL10N70 数据手册

BL10N70

Power MOSFET

1．Description

BL10N70, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

700

Unit

R_DS(ON).Typ

FEATURES

0.7

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL10N70-P

BL10N70-A

Package

TO-220

TO-220F

Product Code

10N70

Packing

Tube

BL10N70-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL10N70:700V 10A

(2) A:TO-220F P:TO-220

BL10N70

Rev 1.0

3/2019

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