Datasheet > BL10N80F

BL10N80F

更新时间： 2024-11-06 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	604K
描述
10A, 800V, 36W, N Channel, Power MOSFETs

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BL10N80F 数据手册

N-Channel Enhancement Mode MOSFET

BL10N80F

Features



Fast switching

Low gate charge

Low reverse transfer capacitances

Mechanical Data



Case: ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

ITO-220AB

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

10N80F

BL10N80F

ITO-220AB

50 pcs / Tube

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

800

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current ^*1

I_D

6.5

I_DM

E_AS

Single Pulse Avalanche Energy

997

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

62.5

3.47

-55 ~ +150

T_STG

°C

MTM5026A: December 2022 [1.0]

www.gmesemi.com

12 3 4 5

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