Datasheet > BL10N80

BL10N80

更新时间： 2023-12-06 20:08:12

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	1506K
描述
BL10N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL10N80 数据手册

BL10N80

Power MOSFET

1．Description

BL10N80, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

800

Unit

R_DS(ON).Typ

FEATURES

0.72

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL10N80-P

BL10N80-A

BL10N80-W

BL10N80-F

Package

Product Code

10N80

Packing

Tube

TO-220

TO-220F

TO-3PN

TO-247

BL10N80-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL10N80:800V 10A

(2) A:TO-220F P:TO-220

W:TO-3PN F:TO-247

BL10N80

Rev 1.0

6/2019

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