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BL10N60

更新时间: 2024-11-06 14:52:27
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
13页 539K
描述
BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

BL10N60 数据手册

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BL10N60  
Power MOSFET  
1Description  
BL10N60, the silicon N-channel Enhanced  
MOSFETs, is obtained by advanced MOSFET  
technology which reduce the conduction loss,  
improve switching performance and enhance the  
avalanche energy. The transistor is suitable device  
for SMPS, high speed switching and general  
purpose applications.  
KEY CHARACTERISTICS  
Parameter  
VDS@Tj.max  
ID  
Value  
650  
10  
Unit  
V
A
RDS(ON).Typ  
FEATURES  
0.47  
Fast Switching  
Low Crss  
100% avalanche tested  
Improved dv/dt capability  
RoHS product  
APPLICATIONS  
High frequency switching mode power supply  
Electronic ballast  
ORDERING INFORMATION  
Ordering Codes  
BL10N60-P  
BL10N60-A  
Package  
TO-220  
TO-220F  
Product Code  
BL10N60  
Packing  
Tube  
Tube  
BL10N60-A  
XXXX Product Code  
(2) Package type  
(1) Chip name  
YYWW Year&Week  
ZZ Assembly Code  
SSSSS Lot Code  
(1)BL10N60:600V 10A  
(2) A:TO-220F P:TO-220  
BL10N60  
Rev 1.0  
4/2019  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  
1 / 13  

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